Overview of H16722P Series
GaAsP and GaAs detectors
- Timing resolution < 140 ps
- Quantum Efficiency up to 43% (cathode dependent)
- Wavelength range: two models covering from 300 nm to 890 nm
- Thermoelectrically cooled
- Internal High voltage power supply
- Gain control though Unit M700
Product Specifications for H16722P Series
| ISS part no. | M730 | M731 |
|---|---|---|
| Photocathode material | GaAsP | GaAs |
| Wavelength range (nm) | 300 - 720 | 380 - 890 |
| Peak sensitivity wavelength | 580 | 800 |
| Quantum efficiency | 40% @ 580 nm | 12% @ 800 nm |
| Dark counts (c/s @ T=30) | < 100 | < 150 |
| Effective area diameter (mm) | 5 | 5 |
| Transit Time Spread (FWHM, typ. Value) | 170 ps | 200 ps |
| Rise time (ns) | 0.780 | |
| Max Count rate | > 10 MHz | |
Signal Output
Polarity
- Negative
Connector
- BNC-R
Impedance
- 50 Ω
Power Supply
Power requirements (from M700 module)
- ± 2 V; Peltier element: 0.5 – 1.0 A
Max Current Consumption (mA)
- 62
Dimensions
Cathode diameter (mm)
- 5
Housing (mm)
- 115 (L) x 56 (W) x 36 (H)
Weight (kg)
- 0.4
